Photoelectron spectra of 4-substituted stilbenes
نویسندگان
چکیده
منابع مشابه
PhotOelectron Spectroscopy of Some trans-2,2'-Disubstituted Stilbenes*
The He I photoelectron (PE) spectra of stilbene (1), 2,2'-dichlorostilbene (2) 2-amino-2'-chlorostilbene (3), 2,2'-diaminostilbene (4) ,and 2,2'-dinitrostilbene (5), all in their trans configuration are recorded and discussed. The electronic structure of 1-5 can well be described on the basis of the composite molecule method and simple Hiickel molecular orbital (HMO) calculations. Results indic...
متن کاملPhotoelectron Spectra of Liquid Metals
TR-PES: Time-resolved photoelectron spectroscopy aims to measure the electron distribution in a molecule as it is going through a transient process, such as dissociation. One ultra fast pulse excites the system under study, and a second ultra fast pulse probes the system at varying time delays by ionizing the molecule and collecting the electrons produced. Ejected photoelectrons reflect the ini...
متن کاملSynthesis of substituted stilbenes via the Knoevenagel condensation.
Knoevenagel condensations between aldehydes and substrates containing active methylene groups were carried out in ethanol at room temperature, in the presence of potassium phosphate, to afford unsymmetrical olefins. These condensations have been shown to afford only the E-isomers in greater than 80% yields. Salicylaldehyde first produces the Knoevenagel condensation products, which undergo a su...
متن کاملPOSITIVE AND NEGATIVE ION MASS SPECTRA OF RING - SUBSTITUTED NITROBENZENES
The 70 ev positive and negative ion mass spectra of ring-substituted nitrobenzenes were studied. The influence of the substituent group on the fragmentation modes of the molecular ions is discussed. The effect of pressure in the formation of negative ions was also studied. As expected, the ratio of fragment ions to negative molecular ions decreased with increasing pressure in ion source.
متن کاملDeconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Canadian Journal of Chemistry
سال: 1978
ISSN: 0008-4042,1480-3291
DOI: 10.1139/v78-447